- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 2,619
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
3,752
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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|
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Infineon Technologies |
427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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|
|
Texas Instruments |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOIC
|
Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.7V | 4A，4A | ||
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|
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Renesas Electronics America Inc. |
2,481
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 9ns，7.5ns | 1.4V，2.2V | 3A，4A | ||
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Renesas Electronics America Inc. |
1,937
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
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|
|
Maxim Integrated |
263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
4,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MONO PIN DVR HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
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|
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Maxim Integrated |
184
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
|
|
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Texas Instruments |
2,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS POWER DRIVER 8-SOIC
|
Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 8-SOIC | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
Tape & Reel (TR) | - | 40V (Max) | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 175ns，20ns | - | 2A，7A | ||
|
|
|
Diodes Incorporated |
2,931
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
Cut Tape (CT) | - | 40V (Max) | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 175ns，20ns | - | 2A，7A | ||
|
|
|
Diodes Incorporated |
2,931
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
- | - | 40V (Max) | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 175ns，20ns | - | 2A，7A | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,537
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,537
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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|
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Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，24ns | 1.1V，1.7V | 500mA，500mA | ||
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|
|
Infineon Technologies |
10,174
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，24ns | 1.1V，1.7V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
10,174
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
- | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，24ns | 1.1V，1.7V | 500mA，500mA | ||
|
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
3,253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A |
