- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 2,619
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Analog Devices Inc. |
22,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
22,877
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
22,877
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
SOP8 HIGH-CURRENT HIGH/LOW-SIDE
|
Tape & Reel (TR) | - | - | - | 8-SOP | - | - | - | - | - | - | - | - | - | ||||
ON Semiconductor |
4,042
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SOP8 HIGH-CURRENT HIGH/LOW-SIDE
|
Cut Tape (CT) | - | - | - | 8-SOP | - | - | - | - | - | - | - | - | - | ||||
ON Semiconductor |
4,042
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SOP8 HIGH-CURRENT HIGH/LOW-SIDE
|
- | - | - | - | 8-SOP | - | - | - | - | - | - | - | - | - | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Infineon Technologies |
11,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Infineon Technologies |
11,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
IXYS Integrated Circuits Division |
4,958
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DUAL LOW SIDE MOSFET DRIVER
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
1,297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-SO
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
STMicroelectronics |
1,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SO | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
STMicroelectronics |
1,049
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8-SOIC
|
Tube | - | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-SO | Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.5V,3.6V | 400mA,650mA | ||||
Texas Instruments |
6,840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
STMicroelectronics |
1,858
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
Tube | - | 17V (Max) | -45°C ~ 125°C (TJ) | 8-SO | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.5V,3.6V | 400mA,650mA | ||||
Infineon Technologies |
1,092
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
1,925
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 0.8V,2.3V | 60mA,130mA | ||||
Infineon Technologies |
2,720
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE 25V 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Renesas Electronics America Inc. |
6,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,2.4V | 2A,2A |