- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 2,619
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
|
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
3,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
3,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8SOIC
|
Tape & Reel (TR) | - | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-SO | Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
|
|
|
STMicroelectronics |
2,788
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8SOIC
|
Cut Tape (CT) | - | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-SO | Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
|
|
|
STMicroelectronics |
2,788
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8SOIC
|
- | - | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-SO | Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
- | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
8,012
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
8,012
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
Tape & Reel (TR) | - | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 45ns，35ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
STMicroelectronics |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
Cut Tape (CT) | - | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 45ns，35ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
STMicroelectronics |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
- | - | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 45ns，35ns | 0.8V，2.5V | 4A，4A |
