- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Supplier Device Package:
-
- Input Type:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- High Side Voltage - Max (Bootstrap):
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 2,619
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 294 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tube | - | 6.1 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns,32ns | 0.8V,2.6V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 70°C (TA) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 35ns,25ns | 0.8V,3V | 1.2A,1.2A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A CMOS 8-SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
Tube | Automotive,AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,25ns | 0.8V,2.7V | 300mA,600mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A |