- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Supplier Device Package：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- High Side Voltage - Max (Bootstrap)：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 2,619
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
- | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Texas Instruments |
13,251
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1.3A，1.4A | ||
|
|
|
ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Infineon Technologies |
1,860
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR CURR SENSE 8SOIC
|
Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
|
|
|
Maxim Integrated |
4,635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Maxim Integrated |
3,509
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Infineon Technologies |
5,206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HI/LO SIDE DRVR 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
|
|
|
Infineon Technologies |
3,198
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Infineon Technologies |
2,891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,398
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDG 600V 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Renesas Electronics America Inc. |
27,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
27,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
27,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
- | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 40MHZ 3ST 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
2,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 40MHZ 3ST 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
2,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 40MHZ 3ST 8SOIC
|
- | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Texas Instruments |
2,297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
|
|
|
Renesas Electronics America Inc. |
4,042
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER PIN 40MHZ 3STATE 8SOIC
|
Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
2,579
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8-SOIC
|
Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A |
