- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 976
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
3,253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 10.6A，11.4A | ||
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|
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Texas Instruments |
1,798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPHERAL DRVR DUAL HS 8SOIC
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
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|
|
Analog Devices Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 4A，4A | ||
|
|
|
Analog Devices Inc. |
4,805
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 4A，4A | ||
|
|
|
Analog Devices Inc. |
4,805
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 4A，4A | ||
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|
|
Maxim Integrated |
332
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
|
|
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NXP USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Tape & Reel (TR) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | 1A，1A | ||
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|
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NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Cut Tape (CT) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | 1A，1A | ||
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|
|
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
- | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | 1A，1A | ||
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|
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Texas Instruments |
123
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC QUAD MOSFET DRIVER 16-DIP
|
Tube | - | 4.75 V ~ 28 V | 0°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Inverting | Independent | Low-Side | 4 | N-Channel MOSFET | - | 20ns，20ns | 500mA，500mA | ||
|
|
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Maxim Integrated |
253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 50ns，40ns | 3A，3A | ||
|
|
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Maxim Integrated |
560
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | 2A，2A | ||
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|
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Texas Instruments |
3,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 3A，3A | ||
|
|
|
Texas Instruments |
160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tube | - | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 3A，3A | ||
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|
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Texas Instruments |
4,500
|
3 jours |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DRIVER 10WSON
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 1.6A，1.6A | ||
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|
|
Texas Instruments |
4,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 10WSON
|
Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 1.6A，1.6A | ||
|
|
|
Texas Instruments |
4,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 10WSON
|
- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 1.6A，1.6A | ||
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|
|
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSF HI/LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | ||
|
|
|
Maxim Integrated |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
|
|
|
Maxim Integrated |
150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-DIP
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | - |
