- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 66
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
5,000
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | ||
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|
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ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | ||
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|
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ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | ||
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Texas Instruments |
3,500
|
3 jours |
-
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MOQ: 3500 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
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Tape & Reel (TR) | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 24μA，2.2mA | ||
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Texas Instruments |
7,778
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
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Cut Tape (CT) | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 24μA，2.2mA | ||
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|
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Texas Instruments |
7,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
- | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 24μA，2.2mA | ||
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Texas Instruments |
19,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Tape & Reel (TR) | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 24μA，2.2mA | ||
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|
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Texas Instruments |
21,741
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC CTRL HIGH SIDE AUTO 10MSOP
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Cut Tape (CT) | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 24μA，2.2mA | ||
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|
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Texas Instruments |
21,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
- | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 24μA，2.2mA | ||
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|
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STMicroelectronics |
1,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
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Tape & Reel (TR) | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 35ns，35ns | - | ||
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|
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STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Cut Tape (CT) | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 35ns，35ns | - | ||
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STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
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- | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 35ns，35ns | - | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
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Tape & Reel (TR) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 22ns，16ns | 4A，8A | ||
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Maxim Integrated |
2,143
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR 1CH 16NS 10TDFN
|
Cut Tape (CT) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 22ns，16ns | 4A，8A | ||
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|
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Maxim Integrated |
2,143
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
- | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 22ns，16ns | 4A，8A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 42ns，30ns | 2A，4A | ||
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|
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Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Cut Tape (CT) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 42ns，30ns | 2A，4A | ||
|
|
|
Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
- | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 42ns，30ns | 2A，4A | ||
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|
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STMicroelectronics |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Tray | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 35ns，35ns | - | ||
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|
|
ON Semiconductor |
52
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A |
