- Packaging：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 30
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
18,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
- | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-MLP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-MLP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-MLP
|
- | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Cut Tape (CT) | -40°C ~ 125°C (TA) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
- | -40°C ~ 125°C (TA) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
Cut Tape (CT) | -40°C ~ 125°C (TA) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
- | -40°C ~ 125°C (TA) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8MLP
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | |||
|
|
ON Semiconductor |
3,265
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8MLP
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A |
