- Packaging：
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- Operating Temperature：
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- Supplier Device Package：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 18
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
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|
ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
- | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 3A，3A | ||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
- | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
- | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 500mA，500mA | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 500mA，500mA | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
- | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 500mA，500mA | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 500mA，500mA | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 500mA，500mA | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
- | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 500mA，500mA |
