- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 347
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
30,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | - | - | 50ns，90ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | - | - | 50ns，90ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | - | - | 50ns，90ns | 500mA，500mA | ||
|
|
|
ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
|
|
|
Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
|
|
|
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
|
|
|
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
|
|
|
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSF HI/LO SIDE 8SOIC
|
Tape & Reel (TR) | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | ||
|
|
|
Microchip Technology |
4,346
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF HI/LO SIDE 8SOIC
|
Cut Tape (CT) | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - |
