Découvrez les produits 11
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
2DM180506CM
Tamura
36
3 jours
-
MOQ: 1  MPQ: 1
IC N-CH GATE DRIVER
- 15 V ~ 24 V -30°C ~ 85°C (TA) 34-DIP Module,31 Leads 502 Through Hole - Independent Half-Bridge 2 N-Channel MOSFET - - -
2DM150606CM
Tamura
25
3 jours
-
MOQ: 1  MPQ: 1
IC IBGT GATE DRIVER
- 15 V ~ 24 V -30°C ~ 85°C (TA) 34-DIP Module,31 Leads 502 Through Hole - Independent Half-Bridge 2 IGBT - - -
2DM150806CM
Tamura
19
3 jours
-
MOQ: 1  MPQ: 1
IC IBGT GATE DRIVER
- 15 V ~ 24 V -30°C ~ 85°C (TA) 34-DIP Module,31 Leads 502 Through Hole - Independent Half-Bridge 2 IGBT - - -
2DM180206CM
Tamura
17
3 jours
-
MOQ: 1  MPQ: 1
IC N-CH GATE DRIVER
- 15 V ~ 24 V -30°C ~ 85°C (TA) 34-DIP Module,31 Leads 502 Through Hole - Independent Half-Bridge 2 N-Channel MOSFET - - -
L9907
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC FET DVR 3PHASE BLDC 64TQFP
Automotive,AEC-Q100 5 V ~ 54 V -40°C ~ 150°C (TJ) 64-TQFP Exposed Pad 64-TQFP-EP (10x10) Surface Mount - 3-Phase Half-Bridge 6 N-Channel MOSFET - 35ns,35ns -
NCV7512FTG
ON Semiconductor
Enquête
-
-
MOQ: 250  MPQ: 1
IC PREDRIVER QUAD LOSIDE 32-LQFP
Automotive,AEC-Q100,FLEXMOS 4.75 V ~ 5.25 V -40°C ~ 150°C (TJ) 32-LQFP 32-LQFP (7x7) Surface Mount Non-Inverting Independent Low-Side 4 N-Channel MOSFET - 1.4μs,1.4μs (Max) -
IR2138QPBF
Infineon Technologies
Enquête
-
-
MOQ: 66  MPQ: 1
IC IGBT DVR 600V 3PHASE 64-MQFP
- 12.5 V ~ 20 V -40°C ~ 125°C (TJ) 64-BQFP 64-MQFP (20x14) Surface Mount Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT 600V 80ns,25ns 350mA,200mA
IR22381QPBF
Infineon Technologies
Enquête
-
-
MOQ: 660  MPQ: 1
IC IGBT DRIVER 3PHASE 64-MQFP
- 12.5 V ~ 20 V -40°C ~ 125°C (TJ) 64-BQFP 64-MQFP (20x14) Surface Mount Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT 1200V 80ns,25ns 350mA,540mA
L6747C
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR N-CH DUAL 8-VFDFPN
- 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-VFDFPN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 3.5A,-
L6743B
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER HI CURR 8VFDFPN
- 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-VFDFPN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 2A,-
L6747A
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRVR 8-VFDFPN
- 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-VFDFPN (3x3) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 3.5A,-