- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 762
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
30,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 5ns，7ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | - | 50ns，90ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | - | 50ns，90ns | 500mA，500mA | ||
|
|
|
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | - | 50ns，90ns | 500mA，500mA | ||
|
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 3A，3A | ||
|
|
|
ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 23ns，19ns | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 5A，5A | ||
|
|
|
Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
HIGH SIDE PROTECTION CONTROL
|
Tape & Reel (TR) | - | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 24μA，2.2mA | ||
|
|
|
Texas Instruments |
11,073
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH SIDE PROTECTION CONTROL
|
Cut Tape (CT) | - | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 24μA，2.2mA |
