- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 175
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
5,125
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPL MOSFET DRVR TO-220-5
|
Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 6A,6A | ||||
Maxim Integrated |
384
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 12-TQFN
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 12-WQFN Exposed Pad | 12-TQFN (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns,65ns | 2A,2A | ||||
ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3A | ||||
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3A | ||||
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3A | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3A | ||||
ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3A | ||||
ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3A | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER HS SOT23
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 28ns,13ns | 3A,7A | ||||
Maxim Integrated |
4,884
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS SOT23
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 28ns,13ns | 3A,7A | ||||
Maxim Integrated |
4,884
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS SOT23
|
- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 28ns,13ns | 3A,7A | ||||
Maxim Integrated |
2,281
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR TTL SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 25ns,14ns | 3A,7A | ||||
Maxim Integrated |
392
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 50ns,40ns | 3A,3A | ||||
Texas Instruments |
3,352
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT MOSFET DRVR 8-DIP
|
Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 6A,6A | ||||
Maxim Integrated |
560
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns,65ns | 2A,2A | ||||
Analog Devices Inc. |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 4A,4A | ||||
Analog Devices Inc. |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 4A,4A | ||||
Analog Devices Inc. |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 4A,4A | ||||
Texas Instruments |
988
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR TO220-5
|
Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 6A,6A | ||||
STMicroelectronics |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOS/IGBT TRIPLE 16SOIC
|
Tape & Reel (TR) | - | 4 V ~ 16 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SO | Surface Mount | Independent | Low-Side | 3 | IGBT,N-Channel MOSFET | - | - | - |