- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 976
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 48HTQFP
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.4 V ~ 45 V | -40°C ~ 175°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | - | 1A，1A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 48HTQFP
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.4 V ~ 45 V | -40°C ~ 150°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | - | 1A，1A | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 38 MPQ: 1
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IC H-BRIDGE PRE-DRIVER 20-SOIC
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Tube | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | 1A，1A | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC PRE-DRIVER FULL BRIDGE 20SOIC
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Tape & Reel (TR) | - | 5.5 V ~ 55 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | - | - | 1A，1A | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 38 MPQ: 1
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IC PRE-DRIVER FULL BRIDGE 20SOIC
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Tube | - | 5.5 V ~ 55 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | - | - | 1A，1A | ||
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ON Semiconductor |
50,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
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ON Semiconductor |
52,157
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
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ON Semiconductor |
52,157
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
|
ON Semiconductor |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
|
ON Semiconductor |
14,435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
|
ON Semiconductor |
14,435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
|
ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
|
ON Semiconductor |
11,940
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
|
ON Semiconductor |
11,940
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 3A，3A | |||
|
|
ON Semiconductor |
17,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
19,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
19,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A |
