- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 976
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC IGBT DRIVER DUAL PDSO18
|
Tape & Reel (TR) | - | 14 V ~ 18 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width),18 Leads | PG-DSO-18-2 | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 20ns,20ns | 1A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT DRIVER DUAL PDSO18
|
Cut Tape (CT) | - | 14 V ~ 18 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width),18 Leads | PG-DSO-18-2 | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 20ns,20ns | 1A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT DRIVER DUAL PDSO18
|
- | - | 14 V ~ 18 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width),18 Leads | PG-DSO-18-2 | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 20ns,20ns | 1A,2A | ||||
Infineon Technologies |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 250mA,500mA | ||||
Infineon Technologies |
10
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 250mA,500mA | ||||
Texas Instruments |
96
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | - | - | 50ns,90ns | 500mA,500mA | ||||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 2A,2A | ||||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 2A,2A | ||||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 2A,2A | ||||
Analog Devices Inc. |
19
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MiniSOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 4A,4A | ||||
Analog Devices Inc. |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL 4A NONINV 8SOIC
|
Tube | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 4A,4A | ||||
Maxim Integrated |
2
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns,65ns | 2A,2A | ||||
Maxim Integrated |
1
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns,65ns | 2A,2A | ||||
Texas Instruments |
10
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 8DIP
|
Tube | - | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER LOW SIDE SOT23-5
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3.2A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE SOT23-5
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3.2A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE SOT23-5
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 3A,3.2A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Tray | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | - | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns,35ns | - | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 500mA,500mA | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 500mA,500mA |