- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 976
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
249
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMP SW FET DRVR 8-SOIC
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Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 500mA，1A | ||
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Texas Instruments |
186
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMP SW FET DRVR 8-SOIC
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Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 500mA，1A | ||
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Renesas Electronics America Inc. |
3,142
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
|
Tube | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DRVR 2CH 16NS 10TDFN
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns，30ns | 2A，4A | ||
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Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC GATE DRVR 2CH 16NS 10TDFN
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Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns，30ns | 2A，4A | ||
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Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
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- | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns，30ns | 2A，4A | ||
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Texas Instruments |
235
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH CURRENT FET DRVR 16-SOIC
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Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 6A，6A | ||
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Texas Instruments |
201
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC NON-INVERT PWR DRIVER 16-DIP
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Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 3A，3A | ||
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Texas Instruments |
1,178
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRVR 8CDIP
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Bulk | - | 4.5 V ~ 5.5 V | -50°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CDIP | Through Hole | Inverting | Independent | Low-Side | 2 | - | - | 5ns，7ns | 500mA，500mA | ||
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Infineon Technologies |
1,273
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER 3-PHASE BRIDGE 28-DIP
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Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
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IC DVR HALF BRIDGE IC 24SSOP
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Tape & Reel (TR) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 1200V | 24ns，7ns | 2A，3A | ||
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Infineon Technologies |
1,489
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DVR HALF BRIDGE IC 24SSOP
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Cut Tape (CT) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 1200V | 24ns，7ns | 2A，3A | ||
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Infineon Technologies |
1,489
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRIDGE IC 24SSOP
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- | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 1200V | 24ns，7ns | 2A，3A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
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IC DRIVER BRIDGE 3PHASE 44PLCC
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Tape & Reel (TR) | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
311
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Cut Tape (CT) | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 250mA，500mA | ||
|
|
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Infineon Technologies |
311
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
- | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 250mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
312
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Cut Tape (CT) | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 250mA，500mA | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
- | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 250mA，500mA | ||
|
|
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Microchip Technology |
839
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI/LOSIDE 8-DIP
|
Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - |
