- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 458
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC DUAL NON-INVERT PWR DRV 8DIP
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Tube | 5 V ~ 35 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC HIGH CURRENT FET DRIVER 8-DIP
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Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC HIGH CURRENT FET DRIVER 8-DIP
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Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DUAL NON-INV PWR DRVR 8DIP
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Tube | 5 V ~ 35 V | -25°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET SNGL 6A HS 8DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET SNGL 6A HS 8DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | - | 125mA，250mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 300 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 300 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HIGH/LOW DRIVER 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 8.3V，12.6V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER SGL-CH 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 150 MPQ: 1
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IC MOSFET DRIVER LIMITING 8-DIP
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Tube | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，40ns | - | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 300 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA |
