- Voltage - Supply:
-
- Operating Temperature:
-
- Channel Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 39
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Texas Instruments |
4,512
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | 14ns,15ns | 1V,4V | ||||
Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
3,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A MOSFET DRIVER 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting,Non-Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | 14ns,15ns | 1V,4V | ||||
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | ||||
Texas Instruments |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A COMP FET DRIVER 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting,Non-Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | 14ns,15ns | 1V,4V | ||||
Renesas Electronics America Inc. |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,10ns | 0.8V,2.4V | ||||
Maxim Integrated |
92
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
629
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | 14ns,15ns | 1V,4V | ||||
Maxim Integrated |
76
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | ||||
Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
241
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | 14ns,15ns | 1V,4V | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
Bulk | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting,Non-Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | 14ns,15ns | 1V,4V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | 14ns,15ns | 1V,4V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting,Non-Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | 14ns,15ns | 1V,4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR DUAL-POWER MOSFET 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR DUAL-POWER MOSFET 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 0.8V,2.4V | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V |