- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 26
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
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Infineon Technologies |
2,399
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH SIDE DRIVER SGL 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LIMITING 8-DIP
|
0 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
228
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURR SENSE 1CH 600V 8DIP
|
12 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
25
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
5
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR CURR SENSE 1CH 600V 8DIP
|
9 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER SGL-CH 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRIVER LIMITING 8-DIP
|
0 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
13 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 250ns，250ns | 0.8V，3V | 130mA，130mA | ||
|
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER MOSFET HI SIDE HS 8DIP
|
12 V ~ 36 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER CURR SENSE 1CH 8-DIP
|
9 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER CURR SENSE 1CH 8-DIP
|
12 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Vishay Siliconix |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR ADAPTIVE PWR 8DIP
|
10.8 V ~ 16.5 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | N-Channel MOSFET | 500V | 50ns，35ns | - | 1A，1A | ||
|
|
Microchip Technology |
334
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HI SIDE HS 8DIP
|
12 V ~ 36 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | - | |||
|
|
Linear Technology/Analog Devices |
537
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE TRPL 8-DIP
|
1.8 V ~ 6 V | 0°C ~ 70°C (TA) | Inverting | Independent | 3 | N-Channel MOSFET | - | - | - | - | |||
|
|
Linear Technology/Analog Devices |
40
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE DUAL 8-DIP
|
4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
|
|
Linear Technology/Analog Devices |
42
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE DUAL 8-DIP
|
4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
|
|
Linear Technology/Analog Devices |
18
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BIAS SYS AUTO PWR-OUTPUT 8DIP
|
- | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | - | - | - | - |
