- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 81
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
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Infineon Technologies |
2,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
|
10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
|
|
|
Infineon Technologies |
2,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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|
|
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
2,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
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Maxim Integrated |
351
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Infineon Technologies |
2,602
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 8.3V，12.6V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
1,169
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
2,599
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
|
|
|
Infineon Technologies |
2,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
195
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
2,795
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
|
|
|
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
245
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 600V 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
2,967
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Maxim Integrated |
150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-DIP
|
4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - |
