- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 142
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
|
Texas Instruments |
4,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-DIP
|
Tube | 4.75 V ~ 5.25 V，4.75 V ~ 24 V | 0°C ~ 70°C (TA) | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | 500mA，500mA | ||
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|
|
Renesas Electronics America Inc. |
409
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
Tube | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
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Texas Instruments |
14,018
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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|
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Texas Instruments |
7,532
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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|
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Maxim Integrated |
351
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
Tube | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
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Texas Instruments |
3,959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
|
|
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Infineon Technologies |
2,599
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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|
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Texas Instruments |
3,826
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTING MOSFET DRVR 8-DIP
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Tube | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
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|
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
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Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-DIP
|
Tube | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Texas Instruments |
527
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
|
|
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Maxim Integrated |
322
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
|
|
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Renesas Electronics America Inc. |
3,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
Tube | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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|
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Microchip Technology |
839
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI/LOSIDE 8-DIP
|
Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
|
|
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Texas Instruments |
282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPHERAL DRVR DUAL HV 8-DIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Independent | Low-Side | 2 | - | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
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|
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Infineon Technologies |
41
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.8V，2.7V | 1A，1A | ||
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Maxim Integrated |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
|
|
|
Texas Instruments |
629
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A |
