- Operating Temperature：
-
- Channel Type：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 8
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Channel Type | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Channel Type | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
2,795
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
-40°C ~ 150°C (TJ) | Independent | IGBT，N-Channel MOSFET | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
-40°C ~ 150°C (TJ) | Independent | IGBT，N-Channel MOSFET | 200ns，100ns | 60mA，130mA | ||
|
|
ON Semiconductor |
158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH VOLT 8-DIP
|
-40°C ~ 150°C (TJ) | Independent | N-Channel MOSFET | 40ns，20ns | 1.4A，2.2A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
-40°C ~ 125°C (TJ) | Independent | IGBT，N-Channel MOSFET | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
-40°C ~ 125°C (TJ) | Independent | IGBT，N-Channel MOSFET | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8-DIP
|
-40°C ~ 125°C (TJ) | Synchronous | IGBT，N-Channel MOSFET | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
-40°C ~ 125°C (TJ) | Synchronous | IGBT，N-Channel MOSFET | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
-40°C ~ 125°C (TJ) | Synchronous | IGBT，N-Channel MOSFET | 85ns，35ns | 250mA，500mA |
