- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 32
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
|
Bulk | -40°C ~ 125°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
Tube | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 600 MPQ: 1
|
IC MONO PIN DVR HS 8DIP
|
Tube | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
|
|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
Tube | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
Tube | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 800 MPQ: 1
|
IC PIN DRIVER 10MHZ 8-DIP
|
Tube | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
|
|
Microchip Technology |
215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
437
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
163
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8DIP
|
Tube | 0°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2V | 3A，3A | |||
|
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Microchip Technology |
654
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HI-SPEED 8DIP
|
Tube | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
477
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8DIP
|
Tube | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2V | 3A，3A | |||
|
|
Microchip Technology |
152
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8DIP
|
Tube | 0°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 660 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
|
Tube | 0°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
|
Tube | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1A HS N-INV 8DIP
|
Tube | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
|
Tube | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
|
Tube | 0°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8DIP
|
Tube | 0°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
|
Tube | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 18ns，18ns | 0.8V，2V | 2A，2A |
