- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 458
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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MOQ: 18000 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DVR HALF BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DVR CURR SENSE 1CH 600V 8DIP
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC DUAL MOSFET DRIVER 8-DIP
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Tube | 4.75 V ~ 5.25 V，4.75 V ~ 24 V | 0°C ~ 70°C (TA) | Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | 500mA，500mA | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC MOSFET DRIVER SGL HS 9A 8DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DUAL HS MOSFET DRVR 8-DIP
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Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC MOSFET DRIVER SGL HS 9A 8DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 200 MPQ: 1
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IC MOSFET DRIVER SGL HS 9A 8DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 150 MPQ: 1
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IC MOSFET DRVR DUAL INV 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC INVERTING MOSFET DRVR 8-DIP
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Tube | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC DUAL HIGH SID FET DRIVER 8DIP
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Tube | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC DUAL HIGH SID FET DRIVER 8DIP
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Tube | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC HIGH CURRENT FET DRVR 8-DIP
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Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC COMPLEMENT POWER DRIVER 8-DIP
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Tube | 5 V ~ 40 V | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
Enquête
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MOQ: 100 MPQ: 1
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IC COMPLEMENTARY PWR DRVR 8-DIP
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Tube | 5 V ~ 40 V | -25°C ~ 85°C (TA) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A |
