Packaging:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 458
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS4427PBF
Infineon Technologies
Enquête
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-
MOQ: 3000  MPQ: 1
IC MOSFET DRIVER
Tube 6 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 2 IGBT,N-Channel MOSFET - 25ns,25ns 0.8V,2.5V 2.3A,3.3A
IRS2109PBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DVR HALF BRIDGE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
ISL89411IPZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRVR MOSFET DUAL-CH 8DIP
Bulk 4.5 V ~ 18 V -40°C ~ 125°C (TJ) Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
IR21531PBF
Infineon Technologies
Enquête
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-
MOQ: 18000  MPQ: 1
IC DVR HALF BRDG SELF-OSC 8-DIP
Tube 10 V ~ 15.6 V -40°C ~ 125°C (TJ) RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR4426PBF
Infineon Technologies
Enquête
-
-
MOQ: 18000  MPQ: 1
IC DRIVER DUAL LOW SIDE 8-DIP
Tube 6 V ~ 20 V -40°C ~ 150°C (TJ) Inverting Independent Low-Side 2 IGBT,N-Channel MOSFET - 15ns,10ns 0.8V,2.7V 2.3A,3.3A
IR2106PBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.9V 200mA,350mA
IRS2111PBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 8.3V,12.6V 290mA,600mA
IRS2108PBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
UCC27423PG4
Texas Instruments
Enquête
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-
MOQ: 350  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8DIP
Tube 4 V ~ 15 V -55°C ~ 150°C (TJ) Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
IR2128PBF
Infineon Technologies
Enquête
-
-
MOQ: 18000  MPQ: 1
IC MOSFET DRVR CURR SENSE 8DIP
Tube 12 V ~ 20 V -40°C ~ 150°C (TJ) Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,3V 250mA,500mA
UCC27323PG4
Texas Instruments
Enquête
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-
MOQ: 350  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8DIP
Tube 4.5 V ~ 15 V -55°C ~ 150°C (TJ) Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27324PG4
Texas Instruments
Enquête
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-
MOQ: 350  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8DIP
Tube 4.5 V ~ 15 V -55°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27325PG4
Texas Instruments
Enquête
-
-
MOQ: 350  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8DIP
Tube 4.5 V ~ 15 V -55°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27424PG4
Texas Instruments
Enquête
-
-
MOQ: 350  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8DIP
Tube 4 V ~ 15 V -55°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27425PG4
Texas Instruments
Enquête
-
-
MOQ: 350  MPQ: 1
IC MOSFET DRIVR DUAL HS 4A 8DIP
Tube 4 V ~ 15 V -55°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC37323PG4
Texas Instruments
Enquête
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-
MOQ: 350  MPQ: 1
IC DUAL HS POWER FET DRIVER 8DIP
Tube 4.5 V ~ 15 V -55°C ~ 150°C (TJ) Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC37324PG4
Texas Instruments
Enquête
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-
MOQ: 350  MPQ: 1
IC DUAL HS POWER FET DRIVER 8DIP
Tube 4.5 V ~ 15 V -55°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC37325PG4
Texas Instruments
Enquête
-
-
MOQ: 350  MPQ: 1
IC DUAL HS PWR FET DRIVER 8DIP
Tube 4.5 V ~ 15 V -55°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
TPS2814PG4
Texas Instruments
Enquête
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-
MOQ: 350  MPQ: 1
IC DUAL HS MOSFET DRVR 8-DIP
Tube 4 V ~ 14 V -40°C ~ 125°C (TA) Inverting,Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2812PG4
Texas Instruments
Enquête
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-
MOQ: 350  MPQ: 1
IC DUAL HS MOSFET DRVR 8-DIP
Tube 4 V ~ 14 V -40°C ~ 125°C (TA) Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A