- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 458
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER
|
Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR HALF BRIDGE 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
Bulk | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
Tube | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8-DIP
|
Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 8.3V,12.6V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Texas Instruments |
Enquête
|
- |
-
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MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC MOSFET DRVR CURR SENSE 8DIP
|
Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | 250mA,500mA | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
Tube | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
Tube | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
Tube | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS POWER FET DRIVER 8DIP
|
Tube | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS POWER FET DRIVER 8DIP
|
Tube | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS PWR FET DRIVER 8DIP
|
Tube | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Inverting,Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A |