- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 458
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1020 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-DIP
|
Tube | 6.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
IXYS |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
|
IC DRVR HALF BRIDGE GATE 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
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MOQ: 300 MPQ: 1
|
IC DRVR HALF BRIDGE GATE 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 450 MPQ: 1
|
IC DRIVER HALF BRDG 600MA 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
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MOQ: 450 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 450 MPQ: 1
|
IC DRIVER MOSF/IGBT HALF 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 450 MPQ: 1
|
IC DRIVER MOSF/IGBT HALF 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 450 MPQ: 1
|
IC DRIVER MOSF/IGBT 0.6A 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 450 MPQ: 1
|
IC DRIVER HALF BRIDGE GATE 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 450 MPQ: 1
|
IC DRIVER HALF BRIDGE GATE 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 450 MPQ: 1
|
IC DRIVER HALF BRIDGE GATE 8DIP
|
Tube | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
1.5A DUAL MOSFET DRVR
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A |
