- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 458
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
Tube | 6.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns,32ns | 0.8V,2.6V | 1.5A,1.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
Tube | 6.1 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns,32ns | 0.8V,2.6V | 1.5A,1.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER GATE SINGLE IGBT 8DIP
|
Tube | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 17ns,17ns | 1.2V,3.2V | 1A,2A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC PREDRIVER IGBT IGNITION 8DIP
|
Tube | 7 V ~ 10 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | - | - | - | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,30ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,30ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 660 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 4.5 V ~ 16 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 35ns,25ns | 0.8V,3V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 19ns,19ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 19ns,19ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC DRIVER MOSFET 6A LO SIDE 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 800 MPQ: 1
|
IC DRIVER MOSFET 6A LO SIDE 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 700 MPQ: 1
|
IC DRIVER MOSFET 9A LOSIDE 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 550 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 550 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 550 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 550 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 550 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 800 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A |