Packaging:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 458
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TC4425VPA
Microchip Technology
Enquête
-
-
MOQ: 300  MPQ: 1
IC MOSFET DVR 3A DUAL HS 8DIP
Tube 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 23ns,25ns 0.8V,2.4V 3A,3A
LTC1154CN8#PBF
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 350  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8-DIP
Tube 4.5 V ~ 18 V 0°C ~ 70°C (TA) Non-Inverting Single High-Side 1 N-Channel MOSFET - - 0.8V,2V -
TC4431VPA
Microchip Technology
Enquête
-
-
MOQ: 240  MPQ: 1
IC MOSFET DRIVER 30V 1.5A 8DIP
Tube 4.5 V ~ 30 V -40°C ~ 150°C (TJ) Inverting Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,33ns 0.8V,2.4V 1.5A,1.5A
TC4421VPA
Microchip Technology
Enquête
-
-
MOQ: 240  MPQ: 1
IC MOSFET DRIVER 9A INV 8DIP
Tube 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 60ns,60ns 0.8V,2.4V 9A,9A
TC4422VPA
Microchip Technology
Enquête
-
-
MOQ: 240  MPQ: 1
IC MOSFET DRIVER 9A N-INV 8DIP
Tube 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 60ns,60ns 0.8V,2.4V 9A,9A
TC4405CPA
Microchip Technology
10
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1.5A DUAL OD 8-DIP
Tube 4.5 V ~ 18 V 0°C ~ 70°C (TA) Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 40ns,40ns (Max) 0.8V,2.4V 1.5A,1.5A
LTC1157CN8#PBF
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 300  MPQ: 1
IC MOSFET DRIVER 3.3V DUAL 8-DIP
Tube 3.3 V ~ 5 V 0°C ~ 70°C (TA) Non-Inverting Independent High-Side or Low-Side 2 N-Channel MOSFET - - - -
TC4626CPA
Microchip Technology
Enquête
-
-
MOQ: 180  MPQ: 1
IC CMOS DRVR W/BOOST 1.5A 8-DIP
Tube 4 V ~ 6 V 0°C ~ 70°C (TA) Inverting Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
LTC1163CN8#PBF
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 250  MPQ: 1
IC MOSFET DVR HI-SIDE TRPL 8-DIP
Tube 1.8 V ~ 6 V 0°C ~ 70°C (TA) Non-Inverting Independent High-Side 3 N-Channel MOSFET - - - -
LTC1255CN8#PBF
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 250  MPQ: 1
IC MOSFET DVR HI-SIDE DUAL 8-DIP
Tube 9 V ~ 24 V 0°C ~ 70°C (TA) Non-Inverting Independent High-Side 2 N-Channel MOSFET - - 0.8V,2V -
TC4627EPA
Microchip Technology
Enquête
-
-
MOQ: 180  MPQ: 1
IC CMOS DRVR W/BOOST 1.5A 8-DIP
Tube 4 V ~ 6 V -40°C ~ 85°C (TA) Non-Inverting Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
TC4626EPA
Microchip Technology
Enquête
-
-
MOQ: 180  MPQ: 1
IC CMOS DRVR W/BOOST 1.5A 8-DIP
Tube 4 V ~ 6 V -40°C ~ 85°C (TA) Inverting Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
LTC1255IN8#PBF
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 200  MPQ: 1
IC MOSFET DVR HI-SIDE DUAL 8-DIP
Tube 9 V ~ 24 V -40°C ~ 85°C (TA) Non-Inverting Independent High-Side 2 N-Channel MOSFET - - 0.8V,2V -
LTC1154CN8
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8-DIP
Tube 4.5 V ~ 18 V 0°C ~ 70°C (TA) Non-Inverting Single High-Side 1 N-Channel MOSFET - - 0.8V,2V -
LTC1255IN8
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DVR HI-SIDE DUAL 8-DIP
Tube 9 V ~ 24 V -40°C ~ 85°C (TA) Non-Inverting Independent High-Side 2 N-Channel MOSFET - - 0.8V,2V -
IR2105
Infineon Technologies
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2107
Infineon Technologies
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER HIGH/LOW DRIVER 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.7V 200mA,350mA
IR2154
Infineon Technologies
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube 10 V ~ 15.6 V -55°C ~ 150°C (TJ) RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2182
Infineon Technologies
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
MC33152P
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER MOSFET DUAL HS 8DIP
Tube 6.1 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 36ns,32ns 0.8V,2.6V 1.5A,1.5A