- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 458
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，29ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
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Linear Technology/Analog Devices |
18
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC BIAS SYS AUTO PWR-OUTPUT 8DIP
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Tube | - | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | High-Side | 2 | N-Channel MOSFET | - | - | - | - | |||
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Microchip Technology |
14
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，29ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
36
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 6A LO SIDE 8DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 12ns，13ns | 0.8V，2.4V | 6A，6A | |||
|
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Microchip Technology |
22
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 12ns，15ns | 0.8V，2.4V | 2A，2A | |||
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Microchip Technology |
57
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DUAL MOSFET IGBT 8-DIP
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Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 660 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8-DIP
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Tube | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | 180mA，260mA | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1A HS N-INV 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
|
Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8DIP
|
Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8DIP
|
Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A |
