- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 458
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DVR MOSFET DUAL-CH 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 17000 MPQ: 1
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IC DRIVER HALF BRIDGE DIP-8
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | - | 125mA，250mA | ||
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Vishay Siliconix |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR ADAPTIVE PWR 8DIP
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Tube | 10.8 V ~ 16.5 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 500V | 50ns，35ns | - | 1A，1A | ||
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Microchip Technology |
1,021
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
1,151
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 6A HS 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
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ON Semiconductor |
1,622
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8DIP
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Tube | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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Microchip Technology |
743
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 9A NON-INV 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 38ns，33ns | 0.8V，2.4V | 10A，10A | |||
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Microchip Technology |
248
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 9A INV 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 38ns，33ns | 0.8V，2.4V | 10A，10A | |||
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Microchip Technology |
1,060
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 9A LOSIDE 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 20ns，24ns | 0.8V，2.4V | 9A，9A | |||
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Microchip Technology |
334
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET HI SIDE HS 8DIP
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Tube | 12 V ~ 36 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | - | |||
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Microchip Technology |
152
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 4.0A DUAL 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A | |||
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Microchip Technology |
611
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 12A HS 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 30ns，32ns | 0.8V，2.4V | 13A，13A | |||
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Microchip Technology |
507
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 9A N-INV 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
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Microchip Technology |
225
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | 7 V ~ 32 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 2V，4.5V | - | |||
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Microchip Technology |
138
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSF HI/LOW SIDE 8-DIP
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Tube | 4.75 V ~ 32 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 2V，4.5V | - | |||
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Microchip Technology |
297
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 4.5A DUAL 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
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Microchip Technology |
233
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 12A HS 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 30ns，32ns | 0.8V，2.4V | 13A，13A | |||
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Microchip Technology |
178
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | 4 V ~ 6 V | 0°C ~ 70°C (TA) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
267
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 4.5A DUAL 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
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Microchip Technology |
145
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 30V 1.5A 8DIP
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Tube | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A |
