- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 458
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 4A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR DUAL 2A 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，3.5V | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRIVER MOSF/IGBT 14A 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，20ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER SGL 9A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER SGL 14A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR DUAL 2A 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，3.5V | 9A，9A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRIVER MOSF/IGBT 14A 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，20ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER SGL 9A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER SGL 14A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER CURR SENSE 1CH 8-DIP
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER CURR SENSE 1CH 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Texas Instruments |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DRVR MOSFET DUAL-CH 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DRVR MOSFET DUAL-CH 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 2000 MPQ: 1
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IC DVR MOSFET DUAL-CH 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A |
