- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 458
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC DVR PIN 40MHZ 3STATE 8DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC DVR PIN 40MHZ 3STATE 8DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC PIN DRIVER 40MHZ 3ST 8-DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSF DRIVER FAST DUAL 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSF DRVR FAST DUAL INV 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSF DRIVER FAST DUAL 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 800 MPQ: 1
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IC PIN DRIVER 10MHZ 8-DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
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IXYS |
Enquête
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MOQ: 500 MPQ: 1
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IC DRVR HALF BRIDGE 600MA 8DIP
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Tube | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，3.5V | 9A，9A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 4A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 9A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 14A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 4A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 9A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 14A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER DUAL 2A 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 0.8V，3V | 2A，2A |
