- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 458
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 4A DUAL 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 14A SGL 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 4A DUAL 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 4A DUAL 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 4A DUAL 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-DIP
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Tube | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET 6A HS 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DRIVER DUAL MOSFET 1.5A 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DRIVER DUAL MOSFET 1.5A 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 300 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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HI/LO SIDE DRVR 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Microchip Technology |
Enquête
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-
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MOQ: 550 MPQ: 1
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IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Microchip Technology |
Enquête
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-
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MOQ: 500 MPQ: 1
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IC DRIVER MOSFET HI SIDE HS 8DIP
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Tube | 12 V ~ 36 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 17000 MPQ: 1
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IC DRIVER HALF BRIDGE OSC 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，45ns | - | 250mA，500mA | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC MONO PIN DVR HS 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A |
