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Découvrez les produits 118
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
6EDL04I06PCX1SA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Die Chip Surface Mount Non-Inverting 3-Phase Half-Bridge 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
6EDL04N06PCX1SA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Die Chip Surface Mount Non-Inverting 3-Phase Half-Bridge 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
M63993FP
Powerex Inc.
Enquête
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MOQ: 38  MPQ: 1
HVIC BRIDGE DVR 3PHASE 36-SSOP
- 10 V ~ 20 V -30°C ~ 125°C (TJ) 36-SOP (0.330",8.40mm Width) 36-SSOP Surface Mount Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 600V 130ns,100ns - 300mA,300mA
VLA507-01
Powerex Inc.
Enquête
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MOQ: 32  MPQ: 1
IC IGBT GATE DVR ISO 3A
- 14 V ~ 15 V -20°C ~ 70°C (TA) 8-SIP Module,6 Leads Module Through Hole Non-Inverting Single Low-Side 1 IGBT - 300ns,300ns - 3A,3A
VLA513-01
Powerex Inc.
Enquête
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MOQ: 15  MPQ: 1
IC IGBT GATE DVR ISO 5A
- 14 V ~ 15 V -20°C ~ 70°C (TA) 8-SIP Module,6 Leads Module Through Hole Non-Inverting Single Low-Side 1 IGBT - 300ns,300ns - 5A,5A
M57161L-01
Powerex Inc.
Enquête
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MOQ: 8  MPQ: 1
IC GATE DRVR FOR IGBT MOD
- 14.3 V ~ 15.7 V -20°C ~ 60°C (TA) 28-SIP,15 Leads Module Through Hole Non-Inverting Single Low-Side 1 IGBT - 400ns,400ns - 7A,7A
VLA500K-01R
Powerex Inc.
Enquête
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MOQ: 10  MPQ: 1
IC IGBT GATE DVR
- 14.2 V ~ 15.8 V -20°C ~ 60°C (TA) 30-SIP Module,21 Leads 21-SIP Through Hole Non-Inverting Single Low-Side 1 IGBT - 300ns,300ns - 12A,12A
VLA553-01R
Powerex Inc.
Enquête
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MOQ: 10  MPQ: 1
IC IGBT GATE DVR ISO 5A
- 14.2 V ~ 15.8 V -25°C ~ 70°C (TA) Module OctaPAK 7+1 Chassis Mount Non-Inverting Independent Half-Bridge 2 IGBT - - - 24A,24A
VLA553-02R
Powerex Inc.
Enquête
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MOQ: 10  MPQ: 1
IC IGBT GATE DVR ISO 5A
- 14.2 V ~ 15.8 V -25°C ~ 70°C (TA) Module Module Chassis Mount Non-Inverting Independent Half-Bridge 2 IGBT - - - 24A,24A
IX2A11S1
IXYS
Enquête
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MOQ: 282  MPQ: 1
IC DRVR HALF BRIDGE GATE 8-SOIC
- - - 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - - - - - - - - -
IX2B11S7
IXYS
Enquête
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MOQ: 265  MPQ: 1
IC DRVR HALF BRIDGE GATE 14-SOIC
- - - 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount - - - - - - - - -
IX2C11S1
IXYS
Enquête
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MOQ: 282  MPQ: 1
IC DRVR HALF BRIDGE GATE 8-SOIC
- - - 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - - - - - - - - -
IX2D11S7
IXYS
Enquête
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MOQ: 265  MPQ: 1
IC DRVR HALF BRIDGE GATE 14-SOIC
- - - 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount - - - - - - - - -
IXB611S1
IXYS
Enquête
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MOQ: 470  MPQ: 1
IC DRIVER HALF BRDG 600MA 8-SOIC
- - - 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - - - - - - - - -
IXC611S1
IXYS
Enquête
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MOQ: 470  MPQ: 1
IC DRIVER HALF BRIDGE 8-SOIC
- - - 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - - - - - - - - -
IXDD430CI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
- 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 0.8V,3.5V 30A,30A
IXDD430MCI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
- 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 0.8V,3.5V 30A,30A
IXDD504D2
IXYS
Enquête
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MOQ: 56  MPQ: 1
IC GATE DRIVER 4A 8-DFN
- 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (4x5) Surface Mount Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 9ns,8ns 0.8V,3V 4A,4A
IXDE504D2
IXYS
Enquête
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MOQ: 56  MPQ: 1
IC GATE DRIVER 4A 8-DFN
- 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (4x5) Surface Mount Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 9ns,8ns 0.8V,3V 4A,4A
IXDE509D1
IXYS
Enquête
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MOQ: 56  MPQ: 1
IC GATE DRIVER 9A 6-DFN
- 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-DFN (4x5) Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,23ns 0.8V,2.4V 9A,9A