- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 78
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
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Power Integrations |
70
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 23.5 V ~ 26.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 6500V | 9ns，30ns | - | 35A，35A | ||
|
|
|
Power Integrations |
34
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 3300V | 9ns，30ns | - | 35A，35A | ||
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|
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Texas Instruments |
225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOIC
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
|
|
|
Texas Instruments |
121
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
|
|
|
Texas Instruments |
3,780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Power Integrations |
108
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 50A
|
SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Independent | High-Side or Low-Side | 2 | IGBT | 1700V | 25ns，25ns | - | 50A，50A | ||
|
|
|
Power Integrations |
128
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 15A
|
SCALE-1 | 12 V ~ 16 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 40ns，40ns | 0.9V，3.8V | 15A，15A | ||
|
|
|
Power Integrations |
291
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 35A
|
SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Independent | High-Side or Low-Side | 2 | IGBT | 4500V | 20ns，25ns | - | 35A，35A | ||
|
|
|
Power Integrations |
86
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 1200V | 9ns，30ns | - | 35A，35A | ||
|
|
|
Renesas Electronics America Inc. |
3,007
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
1,927
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Power Integrations |
21
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 1700V | 9ns，30ns | - | 35A，35A | ||
|
|
|
Melexis Technologies NV |
85
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
AUTOMOTIVE 2 PHASE DC PRE DRIVER
|
Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 175°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | 28-TSSOP | - | Independent | Half-Bridge | 4 | N-Channel MOSFET | - | 7ns，7ns | - | 1.4A，1.6A | ||
|
|
|
Melexis Technologies NV |
80
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
AUTOMOTIVE 3 PHASE DC PRE DRIVER
|
Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 32-VFQFN Exposed Pad | 32-QFN (5x5) | - | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | 7ns，7ns | 0.8V，1.5V | 1.4A，1.6A | ||
|
|
|
Power Integrations |
10
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 23.5 V ~ 26.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 6500V | 9ns，30ns | - | 35A，35A | ||
|
|
|
Power Integrations |
7
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 23.5 V ~ 26.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 4500V | 9ns，30ns | - | 35A，35A | ||
|
|
|
Power Integrations |
5
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 23.5 V ~ 26.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 4500V | 10ns，25ns | - | 35A，35A | ||
|
|
|
Power Integrations |
23
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 1700V | 9ns，30ns | - | 35A，35A | ||
|
|
|
Power Integrations |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | - | Single | High-Side or Low-Side | 1 | IGBT | 3300V | 9ns，30ns | - | 35A，35A |
