- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 5
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Chip | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Chip | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Chip | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Chip | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC POWER MANAGEMENT
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C | Die | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A |
