- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 15
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
1,927
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Texas Instruments |
1,178
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8CDIP
|
4.5 V ~ 5.5 V | -50°C ~ 150°C (TJ) | 8-CDIP (0.300",7.62mm) | 8-CDIP | Through Hole | Independent | 2 | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 0.8V,3.5V | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 0.8V,3.5V | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC GATE DRIVER 4A 8-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x5) | Surface Mount | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC GATE DRIVER 9A 6-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,23ns | 0.8V,2.4V | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC GATE DRIVER 14A 6-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,22ns | 1V,2.5V | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO220-5
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 0.8V,3.5V | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO220-5
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 0.8V,3.5V | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC GATE DRIVER DUAL 2A 6-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC GATE DRIVER SGL 9A 6-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,23ns | 0.8V,2.4V | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC GATE DRIVER SGL 14A 6-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,22ns | 1V,2.5V | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 30 MPQ: 1
|
RF MOSFET DRIVER 20 AMP
|
8 V ~ 30 V | -40°C ~ 150°C (TJ) | 7-SMD,Flat Lead | DE275 | Surface Mount | Single | 1 | N-Channel,P-Channel MOSFET | 3ns,3ns | 0.8V,3.5V | 20A,20A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC POWER MANAGEMENT
|
4.5 V ~ 18 V | 0°C ~ 70°C | Die | Die | Surface Mount | Independent | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A |