- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 48
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Powerex Inc. |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Non-Inverting | Single | 1 | IGBT | 500ns，300ns | - | 2A，2A | ||
|
|
|
Powerex Inc. |
2,246
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR/DC-DC CONV 12A
|
14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 21-SIP Module | Module | Through Hole | Non-Inverting | Single | 1 | IGBT | 300ns，300ns | - | 12A，12A | ||
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Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
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|
|
Renesas Electronics America Inc. |
3,007
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
1,927
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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|
|
Texas Instruments |
1,178
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8CDIP
|
4.5 V ~ 5.5 V | -50°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CDIP | Through Hole | Inverting | Independent | 2 | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Powerex Inc. |
6,224
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DRIVER INV/AC SERVO
|
14 V ~ 17 V | -20°C ~ 70°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Non-Inverting | Single | 1 | IGBT | 400ns，300ns | - | 5A，5A | ||
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|
|
Powerex Inc. |
48
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR ISO 3A
|
14 V ~ 17 V | -20°C ~ 70°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Non-Inverting | Single | 1 | IGBT | 300ns，300ns | - | 3A，3A | ||
|
|
|
Powerex Inc. |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR/DC-DC CONV 12A
|
14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 21-SIP Module | Module | Through Hole | Non-Inverting | Single | 1 | IGBT | 300ns，300ns | - | 12A，12A | ||
|
|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Powerex Inc. |
Enquête
|
- |
-
|
MOQ: 23 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Non-Inverting | Single | 1 | IGBT | 600ns，400ns | - | 5A，5A | ||
|
|
|
Powerex Inc. |
Enquête
|
- |
-
|
MOQ: 21 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Non-Inverting | Single | 1 | IGBT | 500ns，400ns | - | 5A，5A | ||
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|
|
IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET/IGBT DRIVER TO-263
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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|
|
IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC GATE DRIVER ULT FAST 9A 6-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 27 MPQ: 1
|
IC DRVR MOSF/IGBT 30A 28-SOIC
|
8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting，Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | 30A，30A |
