- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 17
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOIC
|
8 V ~ 17 V | -40°C ~ 140°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
|
|
|
Texas Instruments |
3,780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
9 V ~ 14 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Renesas Electronics America Inc. |
3,007
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
1,927
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRVR HALF BRIDGE 600MA 8-SOIC
|
10 V ~ 35 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA | ||
|
|
|
Vishay Siliconix |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR ADAPTIVE PWR 8SOIC
|
10.8 V ~ 16.5 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 500V | 50ns，35ns | - | 1A，1A | ||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 282 MPQ: 1
|
IC DRVR HALF BRIDGE GATE 8-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 282 MPQ: 1
|
IC DRVR HALF BRIDGE GATE 8-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRIVER HALF BRDG 600MA 8-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRIVER MOSF/IGBT HALF 8-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRIVER MOSF/IGBT HALF 8-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRIVER MOSF/IGBT 0.6A 8-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRIVER HALF BRIDGE GATE 8SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRIVER HALF BRIDGE GATE 8SOIC
|
- | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 470 MPQ: 1
|
IC DRIVER HALF BRIDGE GATE 8SOIC
|
- | - | - | - | - | - | - | - | - | - | - |
