Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Gate Type Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IXDN430MYI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC MOSFET/IGBT DRIVER TO-263
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDD430MYI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDD430YI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDI430MYI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDI430YI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDS430SI
IXYS
Enquête
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MOQ: 27  MPQ: 1
IC DRVR MOSF/IGBT 30A 28-SOIC
8.5 V ~ 35 V -55°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting,Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDD430CI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDD430MCI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDI430CI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDI430MCI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
IXDN430MCI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns 30A,30A
DEIC421
IXYS
Enquête
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MOQ: 30  MPQ: 1
RF MOSFET DRIVER 20 AMP
8 V ~ 30 V -40°C ~ 150°C (TJ) 7-SMD,Flat Lead DE275 Surface Mount Inverting N-Channel,P-Channel MOSFET 3ns,3ns 20A,20A