- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Input Type：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Conditions sélectionnées:
Découvrez les produits 220
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE TO263-5
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER SGL 9A 8-DIP
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC GATE DRIVER SGL 9A 8-SOIC
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER SGL 9A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE TO263-5
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER SGL 9A 8-DIP
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC GATE DRIVER SGL 9A 8-SOIC
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER SGL 9A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC MOSFET DVR 9A INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 9A LOSIDE 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
6,991
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LOSIDE 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
6,991
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LOSIDE 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
1,674
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LOSIDE 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
1,060
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LOSIDE 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS TO-220-5
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
507
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A N-INV 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 60ns，60ns | 0.8V，2.4V |
