Découvrez les produits 61
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IXDD609D2TR
IXYS Integrated Circuits Division
4,000
3 jours
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8DFN
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-EP (5x4) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
ZXGD3002E6TA
Diodes Incorporated
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- 20V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Non-Inverting IGBT,N-Channel MOSFET 8.3ns,10.8ns -
UCC27322DGNR
Texas Instruments
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SGL HS 9A 8MSOP
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
IXDN609SITR
IXYS Integrated Circuits Division
6,000
3 jours
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
ZXGD3001E6TA
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- 12V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Non-Inverting IGBT,N-Channel MOSFET 7.3ns,11ns -
UCC27322QDRQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 9A SGL HS 8SOIC
Automotive,AEC-Q100 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27321QDRQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 9A SGL HS 8SOIC
Automotive,AEC-Q100 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27321DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SGL HS 9A 8SOIC
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27322DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SGL HS 9A 8SOIC
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27322QDGNRQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 9A SGL HS 8MSOP
Automotive,AEC-Q100 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27322TDGKREP
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SGL 9A 8VSSOP
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-VSSOP Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
IXDD609SIATR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
IXDI609SIATR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
IXDN609SIATR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
UCC37321DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SGL HS 9A 8SOIC
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC37322DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-SOIC
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC37322DRG4
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-SOIC
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC37321DRG4
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SGL HS 9A 8SOIC
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
IXDD609SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
IXDI609SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V