Découvrez les produits 158
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IXDD609D2TR
IXYS Integrated Circuits Division
4,000
3 jours
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8DFN
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-EP (5x4) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
IXDD609D2TR
IXYS Integrated Circuits Division
4,158
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8DFN
Cut Tape (CT) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-EP (5x4) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
IXDD609D2TR
IXYS Integrated Circuits Division
4,158
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8DFN
- - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-EP (5x4) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
IXDD609SIA
IXYS Integrated Circuits Division
23,077
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
IXDN609SI
IXYS Integrated Circuits Division
8,138
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
IXDD609SI
IXYS Integrated Circuits Division
3,785
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
ZXGD3002E6TA
Diodes Incorporated
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 20V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Non-Inverting IGBT,N-Channel MOSFET 8.3ns,10.8ns -
ZXGD3002E6TA
Diodes Incorporated
6,706
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 20V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Non-Inverting IGBT,N-Channel MOSFET 8.3ns,10.8ns -
ZXGD3002E6TA
Diodes Incorporated
6,706
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 20V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Non-Inverting IGBT,N-Channel MOSFET 8.3ns,10.8ns -
UCC27322DGNR
Texas Instruments
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SGL HS 9A 8MSOP
Tape & Reel (TR) - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27322DGNR
Texas Instruments
4,006
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER SGL HS 9A 8MSOP
Cut Tape (CT) - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27322DGNR
Texas Instruments
4,006
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER SGL HS 9A 8MSOP
- - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC37322D
Texas Instruments
9,183
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-SOIC
Tube - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27322D
Texas Instruments
4,175
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-SOIC
Tube - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
IXDI609YI
IXYS Integrated Circuits Division
233
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A DUAL HS TO263-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
UCC27322DGN
Texas Instruments
6,963
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-MSOP
Tube - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27321DGN
Texas Instruments
959
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-MSOP
Tube - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1V,2V
UCC37321D
Texas Instruments
3,138
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-SOIC
Tube - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC27321D
Texas Instruments
3,907
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-SOIC
Tube - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V
UCC37322DGN
Texas Instruments
563
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SGL HS 9A 8-MSOP
Tube - 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Non-Inverting N-Channel,P-Channel MOSFET 20ns,20ns 1.1V,2.7V