- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 133
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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IXYS Integrated Circuits Division |
4,000
|
3 jours |
-
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MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8DFN
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Cut Tape (CT) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8DFN
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- | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
23,077
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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Diodes Incorporated |
6,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
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Tape & Reel (TR) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | IGBT，N-Channel MOSFET | 8.3ns，10.8ns | - | ||
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Diodes Incorporated |
6,706
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR IGBT/MOSFET SOT23-6
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Cut Tape (CT) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | IGBT，N-Channel MOSFET | 8.3ns，10.8ns | - | ||
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Diodes Incorporated |
6,706
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR IGBT/MOSFET SOT23-6
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- | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | IGBT，N-Channel MOSFET | 8.3ns，10.8ns | - | ||
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Texas Instruments |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER SGL HS 9A 8MSOP
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Tape & Reel (TR) | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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Texas Instruments |
4,006
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER SGL HS 9A 8MSOP
|
Cut Tape (CT) | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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Texas Instruments |
4,006
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER SGL HS 9A 8MSOP
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- | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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Texas Instruments |
9,183
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-SOIC
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Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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Texas Instruments |
4,175
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-SOIC
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Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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Texas Instruments |
3,074
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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Texas Instruments |
6,963
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-MSOP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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Texas Instruments |
3,611
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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Texas Instruments |
563
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-MSOP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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IXYS Integrated Circuits Division |
631
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO220-5
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V |
