- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 121
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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IXYS Integrated Circuits Division |
23,077
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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|
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IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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|
|
IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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|
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Texas Instruments |
9,183
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
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4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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|
|
Texas Instruments |
4,175
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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|
|
Texas Instruments |
3,959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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|
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Texas Instruments |
3,074
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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IXYS Integrated Circuits Division |
233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO263-5
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4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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|
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Texas Instruments |
6,963
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
Texas Instruments |
959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1V，2V | ||
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|
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Texas Instruments |
3,611
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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|
|
Texas Instruments |
3,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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|
|
Texas Instruments |
3,907
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
Texas Instruments |
563
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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|
|
IXYS Integrated Circuits Division |
631
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO220-5
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
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|
|
Texas Instruments |
527
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
Texas Instruments |
215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V |
