- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Input Type：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Conditions sélectionnées:
Découvrez les produits 62
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
|
|
|
Texas Instruments |
3,959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
Texas Instruments |
3,074
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
Texas Instruments |
3,611
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
IXYS Integrated Circuits Division |
631
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO220-5
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
|
|
|
Texas Instruments |
527
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC MOSFET DRIVER SGL HS 9A 8DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC MOSFET DRIVER SGL HS 9A 8DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC MOSFET DRIVER SGL HS 9A 8DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.1V，2.7V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER 9A 8-DIP
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER 9A 8-DIP
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER SGL 9A 8-DIP
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRIVER SGL 9A 8-DIP
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | ||
|
|
Microchip Technology |
1,060
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LOSIDE 8DIP
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V |
