Découvrez les produits 20
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Input Type Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IXDD609CI
IXYS Integrated Circuits Division
631
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A DUAL HS TO220-5
4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
MIC4422ZT
Microchip Technology
133
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET 9A LS TO-220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 20ns,24ns 0.8V,2.4V
TC4422CAT
Microchip Technology
218
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 9A N-INV TO220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 60ns,60ns 0.8V,2.4V
MIC4421ZT
Microchip Technology
85
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET 9A LS TO-220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting IGBT,N-Channel MOSFET 20ns,24ns 0.8V,2.4V
TC4421CAT
Microchip Technology
75
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 9A INV TO220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 60ns,60ns 0.8V,2.4V
MIC4421AZT
Microchip Technology
15
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR HS 9A INV TO220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting N-Channel MOSFET 20ns,24ns 0.8V,3V
IXDI609CI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 9A NON-INV TO220-5
4.5 V ~ 35 V -55°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V
MIC4422AZT
Microchip Technology
Enquête
-
-
MOQ: 300  MPQ: 1
IC DRIVER MOSFET 9A LS TO220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting N-Channel MOSFET 20ns,24ns 0.8V,3V
MIC4421AZT
Microchip Technology
Enquête
-
-
MOQ: 300  MPQ: 1
IC MOSFET DVR HS 9A INV TO220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting N-Channel MOSFET 20ns,24ns 0.8V,3V
TC4422VAT
Microchip Technology
Enquête
-
-
MOQ: 200  MPQ: 1
IC MOSFET DRVR 9A N-INV TO220-5
4.5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 60ns,60ns 0.8V,2.4V
TC4421VAT
Microchip Technology
Enquête
-
-
MOQ: 200  MPQ: 1
IC MOSFET DRIVER 9A INV TO220-5
4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 60ns,60ns 0.8V,2.4V
MIC4421ACT
Microchip Technology
Enquête
-
-
MOQ: 350  MPQ: 1
IC DRIVER MOSFET 9A LS TO-220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting N-Channel MOSFET 20ns,24ns 0.8V,3V
MIC4421CT
Microchip Technology
Enquête
-
-
MOQ: 400  MPQ: 1
IC DRIVER MOSFET 9A LS TO-220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting IGBT,N-Channel MOSFET 20ns,24ns 0.8V,2.4V
MIC4422ACT
Microchip Technology
Enquête
-
-
MOQ: 350  MPQ: 1
IC DRIVER MOSFET 9A LS TO-220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting N-Channel MOSFET 20ns,24ns 0.8V,3V
MIC4422CT
Microchip Technology
Enquête
-
-
MOQ: 400  MPQ: 1
IC DRIVER MOSFET 9A LS TO-220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 20ns,24ns 0.8V,2.4V
MIC4422CTL2
Microchip Technology
Enquête
-
-
MOQ: 300  MPQ: 1
IC DRIVER MOSFET 9A LS TO-220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 20ns,24ns 0.8V,2.4V
MIC4422CTL3
Microchip Technology
Enquête
-
-
MOQ: 300  MPQ: 1
IC DRIVER MOSFET 9A LS TO-220-5
4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel MOSFET 20ns,24ns 0.8V,2.4V
IXDD409CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO220-5
4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 10ns,10ns 0.8V,3.5V
IXDI409CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO220-5
4.5 V ~ 35 V -55°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 10ns,10ns 0.8V,3.5V
IXDN409CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO220-5
4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 10ns,10ns 0.8V,3.5V