- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,549
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
2,483
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
Cut Tape (CT) | - | 20V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | - | High-Side or Low-Side | - | IGBT | - | 18ns,19ns | - | 7.8A,6.8A | ||||
ON Semiconductor |
2,483
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
- | - | 20V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | - | High-Side or Low-Side | - | IGBT | - | 18ns,19ns | - | 7.8A,6.8A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IGBT GATE DRIVER
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | - | High-Side or Low-Side | - | IGBT | - | 9.2ns,7.9ns | 0.75V,4.3V | 7.8A,6.8A | ||||
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
Cut Tape (CT) | Automotive,AEC-Q100 | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | - | High-Side or Low-Side | - | IGBT | - | 9.2ns,7.9ns | 0.75V,4.3V | 7.8A,6.8A | ||||
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
- | Automotive,AEC-Q100 | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | - | High-Side or Low-Side | - | IGBT | - | 9.2ns,7.9ns | 0.75V,4.3V | 7.8A,6.8A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
333
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A SYNC BUCK 8SOIC
|
Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 36V | 10ns,10ns | 0.5V,2V | 2A,2A | ||||
Linear Technology/Analog Devices |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR NCH MOSFET 8-MSOP
|
Tube | - | 6 V ~ 9.5 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 42V | 12ns,8ns | - | 2.4A,2.4A | ||||
Linear Technology/Analog Devices |
89
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SYNC RECTIFIER 8-SOIC
|
Tube | - | 4.5 V ~ 11 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 15ns,15ns | - | 2A,2A | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC LDO REG W/SD 5V 16-SOIC
|
Tape & Reel (TR) | - | 5 V ~ 30 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns,120ns | 0.8V,2V | 500mA,500mA | ||||
Linear Technology/Analog Devices |
18
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BIAS SYS AUTO PWR-OUTPUT 8DIP
|
Tube | - | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | High-Side | 2 | N-Channel MOSFET | - | - | - | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,25ns | 0.8V,2.7V | 300mA,600mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,25ns | 0.8V,2.7V | 300mA,600mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
- | Automotive,AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,25ns | 0.8V,2.7V | 300mA,600mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC REG VR CTLR 5V 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 0.6V,3.3V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC REG VR CTLR 12V 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns,11ns | 1V,2V | - | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Tape & Reel (TR) | - | 5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Surface Mount | CMOS/TTL | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns,12ns | 0.8V,2.4V | 1.5A,2.5A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
SYNCH RECT BUCK MOSFET
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | - | Half-Bridge | 2 | N-Channel MOSFET | - | - | 1.3V,1.9V | -,4A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR DUAL 5V 16QFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (2.5x3.5) | Surface Mount | Non-Inverting | Half-Bridge | 4 | N-Channel,P-Channel MOSFET | 35V | 16ns,11ns | 0.7V,3.4V | - |