- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 631
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
|
ON Semiconductor |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8-SOP
|
- | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
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|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 34V | 30ns，8ns | 0.6V，2.65V | - | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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|
|
Texas Instruments |
49,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns，10ns | 0.8V，2.2V | 1.2A，1.8A | ||
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|
|
Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns，10ns | 0.8V，2.2V | 1.2A，1.8A | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
ON Semiconductor |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Texas Instruments |
21,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR GATE HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1.8A，1.8A | ||
|
|
|
Texas Instruments |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 40MHZ 3ST 8-SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | 0.7V，3.4V | - | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR HALF-BRIDGE SHTDN 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
