- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 29
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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pSemi |
500
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3 jours |
-
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MOQ: 500 MPQ: 1
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HIGH-SPEED FET DRIVER 33 MHZ
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Tape & Reel (TR) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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pSemi |
615
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3 jours |
-
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MOQ: 1 MPQ: 1
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HIGH-SPEED FET DRIVER 33 MHZ
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Cut Tape (CT) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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pSemi |
615
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3 jours |
-
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MOQ: 1 MPQ: 1
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HIGH-SPEED FET DRIVER 33 MHZ
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- | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Half-Bridge | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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SYNCH MOSFET CONTROLLER SOT23 T&
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Tape & Reel (TR) | - | 3.5 V ~ 40 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Low-Side | 1 | N-Channel MOSFET | - | 360ns，210ns | - | 1.5A，3A | ||
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Diodes Incorporated |
1,531
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3 jours |
-
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MOQ: 1 MPQ: 1
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SYNCH MOSFET CONTROLLER,SOT23
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Cut Tape (CT) | - | 3.5 V ~ 40 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Low-Side | 1 | N-Channel MOSFET | - | 360ns，210ns | - | 1.5A，3A | ||
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Diodes Incorporated |
1,531
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3 jours |
-
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MOQ: 1 MPQ: 1
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SYNCH MOSFET CONTROLLER,SOT23
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- | - | 3.5 V ~ 40 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Low-Side | 1 | N-Channel MOSFET | - | 360ns，210ns | - | 1.5A，3A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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700V GATE DRIVER
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Texas Instruments |
3,084
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3 jours |
-
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MOQ: 1 MPQ: 1
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700V GATE DRIVER
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Texas Instruments |
3,084
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3 jours |
-
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MOQ: 1 MPQ: 1
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700V GATE DRIVER
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- | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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UCC27712QDRQ1
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Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Texas Instruments |
2,201
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3 jours |
-
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MOQ: 1 MPQ: 1
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UCC27712QDRQ1
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Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Texas Instruments |
2,201
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3 jours |
-
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MOQ: 1 MPQ: 1
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UCC27712QDRQ1
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- | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Texas Instruments |
963
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3 jours |
-
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MOQ: 1 MPQ: 1
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700V GATE DRIVER
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Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Texas Instruments |
903
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3 jours |
-
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MOQ: 1 MPQ: 1
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620-V，1.8-A，2.8-A HIGH-SIDE LO
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Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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SYNCH MOSFET CONTROLLER 8SO
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Tape & Reel (TR) | - | 4.5 V ~ 12 V | -40°C ~ 125°C | 8-SOIC (0.154"，3.90mm Width) | 8-SO | - | 1 | N-Channel MOSFET | - | 42ns，42ns | - | 5A，5A | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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SYNCH MOSFET CONTROLLER 8SO
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Tape & Reel (TR) | - | 4.5 V ~ 12 V | -40°C ~ 125°C | 8-SOIC (0.154"，3.90mm Width) | 8-SO | - | 1 | N-Channel MOSFET | - | 42ns，42ns | - | 5A，5A | ||
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Monolithic Power Systems Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DRVR HALF BRIDGE 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 12 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Half-Bridge | 2 | N-Channel MOSFET | 600V | - | - | - | ||
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Monolithic Power Systems Inc. |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRVR HALF BRIDGE 16SOIC
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Tube | - | 10 V ~ 12 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Half-Bridge | 2 | N-Channel MOSFET | 600V | - | - | - | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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HIGH CURRENT IGBT GATE DRIVER
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Tape & Reel (TR) | - | 20V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 1 | IGBT | - | 18ns，19ns | - | 7.8A，6.8A | |||
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ON Semiconductor |
2,472
|
3 jours |
-
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MOQ: 1 MPQ: 1
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HIGH CURRENT IGBT GATE DRIVER
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Cut Tape (CT) | - | 20V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | High-Side or Low-Side | 1 | IGBT | - | 18ns，19ns | - | 7.8A，6.8A |
